Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field
نویسندگان
چکیده
منابع مشابه
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15 صفحه اولTerahertz near-field imaging.
A near-field probe is described that enables high spatial resolution imaging with terahertz (THz) pulses. The spatial resolution capabilities of the system lie in the range of few microns and we demonstrate a resolution of 7 microm using broad-banded THz pulses with an intensity maximum near 0.5 THz. We present a study of the performance of the near-field probes in the collection mode configura...
متن کاملHigh Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor
In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15....
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ژورنال
عنوان ژورنال: Journal of the European Optical Society: Rapid Publications
سال: 2009
ISSN: 1990-2573
DOI: 10.2971/jeos.2009.09006